Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition

J. Narayan, P. Tiwari, X. Chen, Jogender Singh, R. Chowdhury, T. Zheleva

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We report epitaxial growth of TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using x-ray diffraction, Rutherford backscattering, four-point-probe ac resistivity, high resolution transmission electron microscopy and scanning electron microscopy techniques and epitaxial relationship was found to be 〈100〉 TiN ∥ 〈100〉 Si. TiN films showed 10%-20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Four-point-probe measurements show characteristic metallic behavior of these films as a function of temperature with a typical resistivity of about 15 μΩ cm at room temperature. Implications of low-resistivity epitaxial TiN in silicon device fabrication are discussed.

Original languageEnglish (US)
Pages (from-to)1290-1292
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - Dec 1 1992


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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