Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)

Y. F. Lee, F. Wu, R. Kumar, F. Hunte, J. Schwartz, J. Narayan

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Abstract

Epitaxial thin films heterostructures of topological insulator candidate Sr3SnO (SSO) are grown on a cubic yttria-stabilized zirconia (c-YSZ)/Si (001) platform by pulsed laser deposition. X-ray and electron diffraction patterns confirm the epitaxial nature of the layers with cube-on-cube orientation relationship: (001)[100]SSO-(001)[100]c-YSZ-;(001)[100] Si. The temperature dependent electrical resistivity shows semiconductor behavior with a transport mechanism following the variable-range-hopping model. The SSO films show room-temperature ferromagnetism with a high saturation magnetization, and a finite non-zero coercivity persisting up to room temperature. These results indicate that SSO is a potential dilute magnetic semiconductor, presumably obtained by controlled introduction of intrinsic defects.

Original languageEnglish (US)
Article number112101
JournalApplied Physics Letters
Volume103
Issue number11
DOIs
StatePublished - Sep 9 2013

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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