Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD

P. K. Baumann, S. K. Streiffer, G. R. Bai, K. Ghosh, O. Auciello, C. Thompson, S. Stemmer, R. A. Rao, C. B. Eom, F. Xu, S. Trolier-Mckinstry, D. J. Kim, J. P. Maria, A. I. Kingon

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Abstract

Epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x (PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18 μC/cm2 was obtained. Initial piezoresponse results are discussed.

Original languageEnglish (US)
Pages (from-to)1881/151-1888/158
JournalIntegrated Ferroelectrics
Volume35
Issue number1-4
StatePublished - May 9 2001
Event12th Interntional Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: Mar 12 2000Mar 15 2000

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Baumann, P. K., Streiffer, S. K., Bai, G. R., Ghosh, K., Auciello, O., Thompson, C., Stemmer, S., Rao, R. A., Eom, C. B., Xu, F., Trolier-Mckinstry, S., Kim, D. J., Maria, J. P., & Kingon, A. I. (2001). Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD. Integrated Ferroelectrics, 35(1-4), 1881/151-1888/158.