Epitaxial PbxZr1-xTiO3 on GaN

E. A. Paisley, H. S. Craft, M. D. Losego, H. Lu, A. Gruverman, R. Collazo, Z. Sitar, Jon-Paul Maria

Research output: Contribution to journalArticle

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Abstract

Epitaxial integration of PbxZr1-xTiO3 (PZT) (111) with GaN (0002) presents the possibility of polarity coupling across a functional-oxide/nitride heteropolar interface. This work describes the synthesis and characterization of such thin film heterostructures by magnetron sputtering, with specific attention given to process optimization. Using x-ray diffraction and electrical characterization, the growth of epitaxial PZT (∼250 nm) on GaN and PZT on MgO/GaN stacks was verified. A two-stage growth process was developed for epitaxial PZT with a deposition temperature of 300 °C and an ex-situ anneal at 650 °C, which was effective in mitigating interfacial reactions and promoting phase-pure perovskite growth. Electrical analysis of interdigital capacitors revealed a nonlinear and hysteretic dielectric response consistent with ferroelectric PZT. Piezoresponse force microscopy (PFM) characterization shows clear evidence of ferroelectric switching, and PFM hysteresis loop analysis shows minimal evidence for direct polarity coupling, but suggests that band offsets which accompany the oxide-nitride heterostructures influence switching.

Original languageEnglish (US)
Article number074107
JournalJournal of Applied Physics
Volume113
Issue number7
DOIs
StatePublished - Feb 21 2013

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nitrides
polarity
microscopy
oxides
capacitors
magnetron sputtering
x ray diffraction
hysteresis
optimization
synthesis
thin films
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Paisley, E. A., Craft, H. S., Losego, M. D., Lu, H., Gruverman, A., Collazo, R., ... Maria, J-P. (2013). Epitaxial PbxZr1-xTiO3 on GaN. Journal of Applied Physics, 113(7), [074107]. https://doi.org/10.1063/1.4792599
Paisley, E. A. ; Craft, H. S. ; Losego, M. D. ; Lu, H. ; Gruverman, A. ; Collazo, R. ; Sitar, Z. ; Maria, Jon-Paul. / Epitaxial PbxZr1-xTiO3 on GaN. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 7.
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Paisley, EA, Craft, HS, Losego, MD, Lu, H, Gruverman, A, Collazo, R, Sitar, Z & Maria, J-P 2013, 'Epitaxial PbxZr1-xTiO3 on GaN', Journal of Applied Physics, vol. 113, no. 7, 074107. https://doi.org/10.1063/1.4792599

Epitaxial PbxZr1-xTiO3 on GaN. / Paisley, E. A.; Craft, H. S.; Losego, M. D.; Lu, H.; Gruverman, A.; Collazo, R.; Sitar, Z.; Maria, Jon-Paul.

In: Journal of Applied Physics, Vol. 113, No. 7, 074107, 21.02.2013.

Research output: Contribution to journalArticle

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AU - Collazo, R.

AU - Sitar, Z.

AU - Maria, Jon-Paul

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Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R et al. Epitaxial PbxZr1-xTiO3 on GaN. Journal of Applied Physics. 2013 Feb 21;113(7). 074107. https://doi.org/10.1063/1.4792599