Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells

Chito E. Kendrick, Sarah M. Eichfeld, Yue Ke, Xiaojun Weng, Xin Wang, Theresa S. Mayer, Joan Marie Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Radial p-n silicon nanowire (SiNW) solar cells are of interest as a potential pathway to increase the efficiency of crystalline silicon photovoltaics by reducing the junction length and surface reflectivity. Our studies have focused on the use of vapor-liquid-solid (VLS) growth in combination with chemical vapor deposition (CVD) processing for the fabrication of radial p-n junction SiNW array solar cells. High aspect ratio p-type SiNW arrays were initially grown on gold-coated (111) Si substrates by CVD using SiCl4 as the source gas and B2H6 as the p-type dopant source. The epitaxial re-growth of n-type Si shell layers on the Si nanowires was then investigated using SiH4 as the source gas and PH3 as the dopant. Highly conformal coatings were achieved on nanowires up to 25 μm in length. The microstructure of the Si shell layer changed from polycrystalline to single crystal as the deposition temperature was raised from 650°C to 950°C. Electrical test structures were fabricated by aligning released SiNWs onto pre-patterned substrates via fieldassisted assembly followed by selective removal of the n-type shell layer and contact deposition. Current-voltage measurements of the radial p-n SiNWs diodes fabricated with re-grown Si shell layers at 950°C demonstrate rectifying behavior with an ideality factor of 1.93. Under illumination from an AM1.5g spectrum and efficiency for this single SiNW radial p-n junction was determined to be 1.8%, total wire diameter was 985 nm.

Original languageEnglish (US)
Title of host publicationNanoepitaxy
Subtitle of host publicationHomo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
DOIs
StatePublished - Oct 26 2010
EventNanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II - San Diego, CA, United States
Duration: Aug 1 2010Aug 4 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7768
ISSN (Print)0277-786X

Other

OtherNanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
CountryUnited States
CitySan Diego, CA
Period8/1/108/4/10

Fingerprint

Regrowth
Silicon Nanowires
Nanowires
Silicon
Solar Cells
Fabrication
Shell
Solar cells
nanowires
solar cells
fabrication
Chemical Vapor Deposition
silicon
Substrate
p-n junctions
Chemical vapor deposition
Reflectivity
Single Crystal
Gases
Solar cell arrays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kendrick, C. E., Eichfeld, S. M., Ke, Y., Weng, X., Wang, X., Mayer, T. S., & Redwing, J. M. (2010). Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells. In Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II [77680I] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7768). https://doi.org/10.1117/12.861571
Kendrick, Chito E. ; Eichfeld, Sarah M. ; Ke, Yue ; Weng, Xiaojun ; Wang, Xin ; Mayer, Theresa S. ; Redwing, Joan Marie. / Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells. Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II. 2010. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Radial p-n silicon nanowire (SiNW) solar cells are of interest as a potential pathway to increase the efficiency of crystalline silicon photovoltaics by reducing the junction length and surface reflectivity. Our studies have focused on the use of vapor-liquid-solid (VLS) growth in combination with chemical vapor deposition (CVD) processing for the fabrication of radial p-n junction SiNW array solar cells. High aspect ratio p-type SiNW arrays were initially grown on gold-coated (111) Si substrates by CVD using SiCl4 as the source gas and B2H6 as the p-type dopant source. The epitaxial re-growth of n-type Si shell layers on the Si nanowires was then investigated using SiH4 as the source gas and PH3 as the dopant. Highly conformal coatings were achieved on nanowires up to 25 μm in length. The microstructure of the Si shell layer changed from polycrystalline to single crystal as the deposition temperature was raised from 650°C to 950°C. Electrical test structures were fabricated by aligning released SiNWs onto pre-patterned substrates via fieldassisted assembly followed by selective removal of the n-type shell layer and contact deposition. Current-voltage measurements of the radial p-n SiNWs diodes fabricated with re-grown Si shell layers at 950°C demonstrate rectifying behavior with an ideality factor of 1.93. Under illumination from an AM1.5g spectrum and efficiency for this single SiNW radial p-n junction was determined to be 1.8{\%}, total wire diameter was 985 nm.",
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Kendrick, CE, Eichfeld, SM, Ke, Y, Weng, X, Wang, X, Mayer, TS & Redwing, JM 2010, Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells. in Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II., 77680I, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, San Diego, CA, United States, 8/1/10. https://doi.org/10.1117/12.861571

Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells. / Kendrick, Chito E.; Eichfeld, Sarah M.; Ke, Yue; Weng, Xiaojun; Wang, Xin; Mayer, Theresa S.; Redwing, Joan Marie.

Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II. 2010. 77680I (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7768).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Eichfeld, Sarah M.

AU - Ke, Yue

AU - Weng, Xiaojun

AU - Wang, Xin

AU - Mayer, Theresa S.

AU - Redwing, Joan Marie

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N2 - Radial p-n silicon nanowire (SiNW) solar cells are of interest as a potential pathway to increase the efficiency of crystalline silicon photovoltaics by reducing the junction length and surface reflectivity. Our studies have focused on the use of vapor-liquid-solid (VLS) growth in combination with chemical vapor deposition (CVD) processing for the fabrication of radial p-n junction SiNW array solar cells. High aspect ratio p-type SiNW arrays were initially grown on gold-coated (111) Si substrates by CVD using SiCl4 as the source gas and B2H6 as the p-type dopant source. The epitaxial re-growth of n-type Si shell layers on the Si nanowires was then investigated using SiH4 as the source gas and PH3 as the dopant. Highly conformal coatings were achieved on nanowires up to 25 μm in length. The microstructure of the Si shell layer changed from polycrystalline to single crystal as the deposition temperature was raised from 650°C to 950°C. Electrical test structures were fabricated by aligning released SiNWs onto pre-patterned substrates via fieldassisted assembly followed by selective removal of the n-type shell layer and contact deposition. Current-voltage measurements of the radial p-n SiNWs diodes fabricated with re-grown Si shell layers at 950°C demonstrate rectifying behavior with an ideality factor of 1.93. Under illumination from an AM1.5g spectrum and efficiency for this single SiNW radial p-n junction was determined to be 1.8%, total wire diameter was 985 nm.

AB - Radial p-n silicon nanowire (SiNW) solar cells are of interest as a potential pathway to increase the efficiency of crystalline silicon photovoltaics by reducing the junction length and surface reflectivity. Our studies have focused on the use of vapor-liquid-solid (VLS) growth in combination with chemical vapor deposition (CVD) processing for the fabrication of radial p-n junction SiNW array solar cells. High aspect ratio p-type SiNW arrays were initially grown on gold-coated (111) Si substrates by CVD using SiCl4 as the source gas and B2H6 as the p-type dopant source. The epitaxial re-growth of n-type Si shell layers on the Si nanowires was then investigated using SiH4 as the source gas and PH3 as the dopant. Highly conformal coatings were achieved on nanowires up to 25 μm in length. The microstructure of the Si shell layer changed from polycrystalline to single crystal as the deposition temperature was raised from 650°C to 950°C. Electrical test structures were fabricated by aligning released SiNWs onto pre-patterned substrates via fieldassisted assembly followed by selective removal of the n-type shell layer and contact deposition. Current-voltage measurements of the radial p-n SiNWs diodes fabricated with re-grown Si shell layers at 950°C demonstrate rectifying behavior with an ideality factor of 1.93. Under illumination from an AM1.5g spectrum and efficiency for this single SiNW radial p-n junction was determined to be 1.8%, total wire diameter was 985 nm.

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Kendrick CE, Eichfeld SM, Ke Y, Weng X, Wang X, Mayer TS et al. Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells. In Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II. 2010. 77680I. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.861571