Epitaxial strain effect on transport properties in Ca2-xSr xRuO4 thin films

Ludi Miao, Wenyong Zhang, Punam Silwal, Xiaolan Zhou, Ilan Stern, Tijiang Liu, Jin Peng, Jin Hu, Dae Ho Kim, Zhiqiang Mao

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have grown Ca2-xSrxRuO4 (x = 0, 0.1, 0.5, and 2) epitaxial thin films using a pulsed laser deposition method and characterized their structures and magnetotransport properties. We find that the x = 0, 0.1, and 0.5 films grown on LaAlO3 substrates exhibit coherent strain with tetragonal structure. The nature of strain is dependent on Sr content: the Ca2RuO4 (x = 0) film features biaxial compressive strain, while the x = 0.5 film shows biaxial tensile strain. The strain in the x = 0.1 film is relatively weak and strongly anisotropic, with compressive strain along the a axis and tensile strain along the b axis. In contrast, the Sr2RuO4 films show strain relaxation. The epitaxial strain effect leads the properties of the x=0, 0.1, and 0.5 films to be distinct from those of bulk materials. The bulk material shows antiferromagnetic Mott-insulating properties for x < 0.2 and a nearly ferromagnetic state for x ∼ 0.5, whereas the film displays itinerant ferromagnetism for x = 0 and 0.1 and paramagnetic metal for x = 0.5. Furthermore, in the x = 0 and 0.1 films, we observed distinct fourfold ferromagnetic anisotropy, with the minimum magnetoresistivity along the diagonal directions for x = 0 and a and b directions for x = 0.1. Such evolution of magnetic anisotropy may be associated with the tuning of the spin-orbit coupling by the epitaxial strain.

Original languageEnglish (US)
Article number115102
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number11
DOIs
StatePublished - Sep 3 2013

Fingerprint

Transport properties
transport properties
Thin films
thin films
Tensile strain
Antiferromagnetic materials
Strain relaxation
Galvanomagnetic effects
magnetoresistivity
anisotropy
Ferromagnetism
Magnetic anisotropy
Epitaxial films
Magnetoresistance
Pulsed laser deposition
ferromagnetism
pulsed laser deposition
Orbits
Anisotropy
Tuning

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Miao, Ludi ; Zhang, Wenyong ; Silwal, Punam ; Zhou, Xiaolan ; Stern, Ilan ; Liu, Tijiang ; Peng, Jin ; Hu, Jin ; Kim, Dae Ho ; Mao, Zhiqiang. / Epitaxial strain effect on transport properties in Ca2-xSr xRuO4 thin films. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 88, No. 11.
@article{b6778b591f6f4a9b9e436a3f12bcc1fa,
title = "Epitaxial strain effect on transport properties in Ca2-xSr xRuO4 thin films",
abstract = "We have grown Ca2-xSrxRuO4 (x = 0, 0.1, 0.5, and 2) epitaxial thin films using a pulsed laser deposition method and characterized their structures and magnetotransport properties. We find that the x = 0, 0.1, and 0.5 films grown on LaAlO3 substrates exhibit coherent strain with tetragonal structure. The nature of strain is dependent on Sr content: the Ca2RuO4 (x = 0) film features biaxial compressive strain, while the x = 0.5 film shows biaxial tensile strain. The strain in the x = 0.1 film is relatively weak and strongly anisotropic, with compressive strain along the a axis and tensile strain along the b axis. In contrast, the Sr2RuO4 films show strain relaxation. The epitaxial strain effect leads the properties of the x=0, 0.1, and 0.5 films to be distinct from those of bulk materials. The bulk material shows antiferromagnetic Mott-insulating properties for x < 0.2 and a nearly ferromagnetic state for x ∼ 0.5, whereas the film displays itinerant ferromagnetism for x = 0 and 0.1 and paramagnetic metal for x = 0.5. Furthermore, in the x = 0 and 0.1 films, we observed distinct fourfold ferromagnetic anisotropy, with the minimum magnetoresistivity along the diagonal directions for x = 0 and a and b directions for x = 0.1. Such evolution of magnetic anisotropy may be associated with the tuning of the spin-orbit coupling by the epitaxial strain.",
author = "Ludi Miao and Wenyong Zhang and Punam Silwal and Xiaolan Zhou and Ilan Stern and Tijiang Liu and Jin Peng and Jin Hu and Kim, {Dae Ho} and Zhiqiang Mao",
year = "2013",
month = "9",
day = "3",
doi = "10.1103/PhysRevB.88.115102",
language = "English (US)",
volume = "88",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "11",

}

Epitaxial strain effect on transport properties in Ca2-xSr xRuO4 thin films. / Miao, Ludi; Zhang, Wenyong; Silwal, Punam; Zhou, Xiaolan; Stern, Ilan; Liu, Tijiang; Peng, Jin; Hu, Jin; Kim, Dae Ho; Mao, Zhiqiang.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, No. 11, 115102, 03.09.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Epitaxial strain effect on transport properties in Ca2-xSr xRuO4 thin films

AU - Miao, Ludi

AU - Zhang, Wenyong

AU - Silwal, Punam

AU - Zhou, Xiaolan

AU - Stern, Ilan

AU - Liu, Tijiang

AU - Peng, Jin

AU - Hu, Jin

AU - Kim, Dae Ho

AU - Mao, Zhiqiang

PY - 2013/9/3

Y1 - 2013/9/3

N2 - We have grown Ca2-xSrxRuO4 (x = 0, 0.1, 0.5, and 2) epitaxial thin films using a pulsed laser deposition method and characterized their structures and magnetotransport properties. We find that the x = 0, 0.1, and 0.5 films grown on LaAlO3 substrates exhibit coherent strain with tetragonal structure. The nature of strain is dependent on Sr content: the Ca2RuO4 (x = 0) film features biaxial compressive strain, while the x = 0.5 film shows biaxial tensile strain. The strain in the x = 0.1 film is relatively weak and strongly anisotropic, with compressive strain along the a axis and tensile strain along the b axis. In contrast, the Sr2RuO4 films show strain relaxation. The epitaxial strain effect leads the properties of the x=0, 0.1, and 0.5 films to be distinct from those of bulk materials. The bulk material shows antiferromagnetic Mott-insulating properties for x < 0.2 and a nearly ferromagnetic state for x ∼ 0.5, whereas the film displays itinerant ferromagnetism for x = 0 and 0.1 and paramagnetic metal for x = 0.5. Furthermore, in the x = 0 and 0.1 films, we observed distinct fourfold ferromagnetic anisotropy, with the minimum magnetoresistivity along the diagonal directions for x = 0 and a and b directions for x = 0.1. Such evolution of magnetic anisotropy may be associated with the tuning of the spin-orbit coupling by the epitaxial strain.

AB - We have grown Ca2-xSrxRuO4 (x = 0, 0.1, 0.5, and 2) epitaxial thin films using a pulsed laser deposition method and characterized their structures and magnetotransport properties. We find that the x = 0, 0.1, and 0.5 films grown on LaAlO3 substrates exhibit coherent strain with tetragonal structure. The nature of strain is dependent on Sr content: the Ca2RuO4 (x = 0) film features biaxial compressive strain, while the x = 0.5 film shows biaxial tensile strain. The strain in the x = 0.1 film is relatively weak and strongly anisotropic, with compressive strain along the a axis and tensile strain along the b axis. In contrast, the Sr2RuO4 films show strain relaxation. The epitaxial strain effect leads the properties of the x=0, 0.1, and 0.5 films to be distinct from those of bulk materials. The bulk material shows antiferromagnetic Mott-insulating properties for x < 0.2 and a nearly ferromagnetic state for x ∼ 0.5, whereas the film displays itinerant ferromagnetism for x = 0 and 0.1 and paramagnetic metal for x = 0.5. Furthermore, in the x = 0 and 0.1 films, we observed distinct fourfold ferromagnetic anisotropy, with the minimum magnetoresistivity along the diagonal directions for x = 0 and a and b directions for x = 0.1. Such evolution of magnetic anisotropy may be associated with the tuning of the spin-orbit coupling by the epitaxial strain.

UR - http://www.scopus.com/inward/record.url?scp=84884896489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884896489&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.88.115102

DO - 10.1103/PhysRevB.88.115102

M3 - Article

VL - 88

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 11

M1 - 115102

ER -