Epitaxial strain effect on transport properties in Ca2-xSr xRuO4 thin films

Ludi Miao, Wenyong Zhang, Punam Silwal, Xiaolan Zhou, Ilan Stern, Tijiang Liu, Jin Peng, Jin Hu, Dae Ho Kim, Zhiqiang Mao

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We have grown Ca2-xSrxRuO4 (x = 0, 0.1, 0.5, and 2) epitaxial thin films using a pulsed laser deposition method and characterized their structures and magnetotransport properties. We find that the x = 0, 0.1, and 0.5 films grown on LaAlO3 substrates exhibit coherent strain with tetragonal structure. The nature of strain is dependent on Sr content: the Ca2RuO4 (x = 0) film features biaxial compressive strain, while the x = 0.5 film shows biaxial tensile strain. The strain in the x = 0.1 film is relatively weak and strongly anisotropic, with compressive strain along the a axis and tensile strain along the b axis. In contrast, the Sr2RuO4 films show strain relaxation. The epitaxial strain effect leads the properties of the x=0, 0.1, and 0.5 films to be distinct from those of bulk materials. The bulk material shows antiferromagnetic Mott-insulating properties for x < 0.2 and a nearly ferromagnetic state for x ∼ 0.5, whereas the film displays itinerant ferromagnetism for x = 0 and 0.1 and paramagnetic metal for x = 0.5. Furthermore, in the x = 0 and 0.1 films, we observed distinct fourfold ferromagnetic anisotropy, with the minimum magnetoresistivity along the diagonal directions for x = 0 and a and b directions for x = 0.1. Such evolution of magnetic anisotropy may be associated with the tuning of the spin-orbit coupling by the epitaxial strain.

Original languageEnglish (US)
Article number115102
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number11
DOIs
StatePublished - Sep 3 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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