Equilibrium strain-energy analysis of coherently strained core-shell nanowires

Thomas E. Trammell, Xi Zhang, Yulan Li, Long Qing Chen, Elizabeth C. Dickey

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

In order to continue the performance enhancement of Si-based semiconductor devices, the number of devices on a chip as well as the performance of those devices must continue to improve. One method for improving device functionality is the incorporation of strained Si-Ge heterostructures. While such heterostructures have been the focus of much research in planar Si processing, only recently has the fabrication of such heterostructures in nanoscale semiconductors been addressed. In particular, the fabrication of a Si-Ge radial nanowire heterostructure requires a consideration of the epitaxial stability of the shell on the underlying core nanowire. This work develops a model for the strain state of a radial nanowire heterostructure, focusing on the particular example of Si-Ge. The behavior of the radial nanowire heterostructure is compared to that of a planar heterostructure, and we find that much higher strains can be achieved in the nanowire geometry.

Original languageEnglish (US)
Pages (from-to)3084-3092
Number of pages9
JournalJournal of Crystal Growth
Volume310
Issue number12
DOIs
StatePublished - Jun 1 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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