Erratum: Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si (applied physics letters 105, 172105 (2014))

Burcu Ozden, Chungman Yang, Fei Tong, Min P. Khanal, Vahid Mirkhani, Mobbassar Hassan Sk, Ayayi Claude Ahyi, Minseo Park

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish (US)
Article number219902
JournalApplied Physics Letters
Issue number21
StatePublished - May 25 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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