Erratum: "High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors" [Appl. Phys. Lett. 105, 083511 (2014)]

Saptarshi Das, Madan Dubey, Andreas Roelofs

Research output: Contribution to journalComment/debate

Original languageEnglish (US)
Article number069902
JournalApplied Physics Letters
Volume108
Issue number6
DOIs
StatePublished - Feb 8 2016

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high gain
low noise
logic
field effect transistors

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Erratum: {"}High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors{"} [Appl. Phys. Lett. 105, 083511 (2014)]",
author = "Saptarshi Das and Madan Dubey and Andreas Roelofs",
year = "2016",
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day = "8",
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language = "English (US)",
volume = "108",
journal = "Applied Physics Letters",
issn = "0003-6951",
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}

Erratum : "High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors" [Appl. Phys. Lett. 105, 083511 (2014)]. / Das, Saptarshi; Dubey, Madan; Roelofs, Andreas.

In: Applied Physics Letters, Vol. 108, No. 6, 069902, 08.02.2016.

Research output: Contribution to journalComment/debate

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AU - Dubey, Madan

AU - Roelofs, Andreas

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DO - 10.1063/1.4941819

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JO - Applied Physics Letters

JF - Applied Physics Letters

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