Erratum: Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film (Applied Physics Letters (2013) 102 (072106))

Ayan Kar, Nikhil Shukla, Eugene Freeman, Hanjong Paik, Huichu Liu, Roman Engel-Herbert, S. S.N. Bharadwaja, Darrell G. Schlom, Suman Datta

Research output: Contribution to journalComment/debate

Original languageEnglish (US)
Article number129904
JournalApplied Physics Letters
Volume103
Issue number12
DOIs
StatePublished - Sep 16 2013

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dioxides
vanadium
physics
thin films
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kar, Ayan ; Shukla, Nikhil ; Freeman, Eugene ; Paik, Hanjong ; Liu, Huichu ; Engel-Herbert, Roman ; Bharadwaja, S. S.N. ; Schlom, Darrell G. ; Datta, Suman. / Erratum : Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film (Applied Physics Letters (2013) 102 (072106)). In: Applied Physics Letters. 2013 ; Vol. 103, No. 12.
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Erratum : Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film (Applied Physics Letters (2013) 102 (072106)). / Kar, Ayan; Shukla, Nikhil; Freeman, Eugene; Paik, Hanjong; Liu, Huichu; Engel-Herbert, Roman; Bharadwaja, S. S.N.; Schlom, Darrell G.; Datta, Suman.

In: Applied Physics Letters, Vol. 103, No. 12, 129904, 16.09.2013.

Research output: Contribution to journalComment/debate

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AU - Shukla, Nikhil

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AU - Paik, Hanjong

AU - Liu, Huichu

AU - Engel-Herbert, Roman

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AU - Schlom, Darrell G.

AU - Datta, Suman

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