ESR study of E′ trapping centers in SIMOX oxides

John F. Conley, Patrick M. Lenahan, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

The authors explore E′ trapping centers in separation by implanted oxygen (SIMOX) buried oxides with electron spin resonance (ESR) and capacitance vs. voltage (CV) measurements. Through the use of vacuum-ultraviolet (VUV) (hc/ = 10.2 eV) and ultraviolet (hc/ = 5 eV) illumination combined with ESR and CV measurements, they present evidence that E′ centers are important in SIMOX trapping and that thermal oxide trapping and SIMOX trapping involve different mechanisms. It is shown that E′ precursors are present in higher density in the SIMOX oxides explored than in thermal oxides. Large changes in E′ density are induced by injecting electrons or holes into VUV illuminated oxides; this shows that a high percentage of the centers are efficient traps. CV measurements show low amounts of net space charge; this suggests a compensating trap mechanism.

Original languageEnglish (US)
Title of host publication1991 IEEE International SOI Conference Proceedings
PublisherPubl by IEEE
Pages12-13
Number of pages2
ISBN (Print)0780301846
StatePublished - Jan 1 1992
Event1991 IEEE International SOI Conference - Vail Valley, CO, USA
Duration: Oct 1 1991Oct 3 1991

Publication series

Name1991 IEEE International SOI Conference Proceedings

Other

Other1991 IEEE International SOI Conference
CityVail Valley, CO, USA
Period10/1/9110/3/91

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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