Etching of silicon native oxide using ultraslow multicharged Arq+ ions

V. Le Roux, G. Machicoane, S. Kerdiles, R. Laffitte, N. Béchu, L. Vallier, G. Borsoni, M. L. Korwin-Pawlowski, P. Roman, C. T. Wu, Jerzy Ruzyllo

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Etching of native silicon oxide on the silicon surface using ultraslow multicharged Arq+ (q > 1) ions is investigated. As opposed to "kinetic sputtering" using singly charged argon ions (Ar1+), oxide removal using multicharged ions is accomplished primarily by a "potential sputtering" mechanism. The ion dose needed to obtain complete oxide removal for different ion charge states is determined. It is demonstrated that by using ultraslow multicharged Arq+ ions instead of singly charged ions with higher kinetic energy the native oxide can be physically removed, i.e., without any chemical interactions, essentially with no damage to the Si surface and subsurface region.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume151
Issue number1
DOIs
StatePublished - Feb 16 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Etching of silicon native oxide using ultraslow multicharged Ar<sup>q+</sup> ions'. Together they form a unique fingerprint.

Cite this