Etching of Thermal Oxides in Low Pressure Anhydrous HF/CH3OH Gas Mixture at Elevated Temperature

J. Ruzyllo, K. Torek, C. Daffron, R. Grant, R. Novak

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

Etching of thermal oxides in HF/CH3OH gas mixture at the pressure from 100 to 500 Torr and wafer temperatures from 25 to 120°C is studied using a commercial cluster tool compatible reactor. Pressure and temperature are selected to control condensation of reactants on the etched surfaces, and hence, the thermal oxide etch rate. Using this etching mode, controlled etching of thermal oxides at rates up to 200 A/min was achieved without any water vapor intentionally added to the input gases.

Original languageEnglish (US)
Pages (from-to)L64-L66
JournalJournal of the Electrochemical Society
Volume140
Issue number4
DOIs
StatePublished - Apr 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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