Eu3+ activated GaN thin films grown on sapphire by pulsed laser deposition

Nestor Perea-Lopez, Jonathan H. Tao, Joanna McKittrick, Jan B. Talbot, M. Raukas, J. Laski, K. C. Mishra, Gustavo Hirata

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

By means of pulsed laser deposition, polycrystlline thin films of GaN doped with Eu3+ were grown on sapphire. The PLD target was formed in three steps. First, stoichiometric amounts of Ga2O3 and Eu 2O3 were dissolved in nitric acid, which produces Ga (1-x)Eux(NO3)3. Next, the nitrates were oxidized in a tubular furnace with O2 flow forming Ga 2(1-x)Eu2xO3. Finally, the oxide powder was flushed with anhydrous ammonia to produce the desired nitride product: Ga (1-x)EuxN. Film growth was done in a stainless steel vacuum chamber partially filled with N2 (400 mTorr). For the deposit, the 3rd harmonic of a Nd:YAG laser (λ = 355 nm) was focused on the surface of the target. After deposition, annealing in NH3 was required to produce films with pure GaN hexagonal phase. The luminescence of the film was characterized by photo- and cathodoluminescence. In addition, the chemical and structural properties were analyzed by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy.

Original languageEnglish (US)
Pages (from-to)1756-1758
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: Sep 16 2007Sep 21 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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