Evaluating and improving SIMS method for measuring nitrogen in SiC

Howard E. Smith, Kurt G. Eyink, William C. Mitchel, Mark C. Wood, Mark Andrew Fanton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A multiple data point version of the industry standard, two data point raster-changing procedure is employed to measure low levels (< 1 × 1017 atoms/cm-3) of nitrogen (N) in silicon carbide (SiC) by SIMS (Secondary Ion Mass Spectrometry). A current-changing procedure is also employed. Together, these are used evaluate the assumptions of the standard method, to separate and measure the components of background signal, and to improve upon the precision and accuracy of the standard method. The risk of poor precision in the two-point method is demonstrated, as is the improvement provided by the multiple-point method. Results show that, in addition to the wellknown N memory background, adsorption background can contribute significantly to the N signal. In general, establishing the presence of adsorption gas in this way can be used to warn of the presence of ionization background, which is not measurable per se.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages617-620
Number of pages4
EditionPART 1
StatePublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Secondary ion mass spectrometry
Silicon carbide
silicon carbides
secondary ion mass spectrometry
Nitrogen
nitrogen
Gas adsorption
adsorption
Ionization
industries
Data storage equipment
Adsorption
ionization
Atoms
gases
atoms
silicon carbide
Industry

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Smith, H. E., Eyink, K. G., Mitchel, W. C., Wood, M. C., & Fanton, M. A. (2006). Evaluating and improving SIMS method for measuring nitrogen in SiC. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 617-620). (Materials Science Forum; Vol. 527-529, No. PART 1).
Smith, Howard E. ; Eyink, Kurt G. ; Mitchel, William C. ; Wood, Mark C. ; Fanton, Mark Andrew. / Evaluating and improving SIMS method for measuring nitrogen in SiC. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. pp. 617-620 (Materials Science Forum; PART 1).
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Smith, HE, Eyink, KG, Mitchel, WC, Wood, MC & Fanton, MA 2006, Evaluating and improving SIMS method for measuring nitrogen in SiC. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, pp. 617-620, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.

Evaluating and improving SIMS method for measuring nitrogen in SiC. / Smith, Howard E.; Eyink, Kurt G.; Mitchel, William C.; Wood, Mark C.; Fanton, Mark Andrew.

Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. p. 617-620 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Smith HE, Eyink KG, Mitchel WC, Wood MC, Fanton MA. Evaluating and improving SIMS method for measuring nitrogen in SiC. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. 2006. p. 617-620. (Materials Science Forum; PART 1).