Evaluation of 1/f noise in prospective IR imaging thin films

Hitesh A. Basantani, David B. Saint John, Nikolas J. Podraza, Thomas N. Jackson, Mark W. Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Vanadium oxide (VOx) and hydrogenated silicon germanium (Si xGe1-x) are the two predominant thin film material systems used as the active layer in resistive infrared imaging. Thin films of VOx used in microbolometers have a resistivity typically between 0.1 and 1 Ω-cm with a temperature coefficient of resistance, |TCR| between 1.4%/K to 2.4%/K, while SixGe1-x:H thin films have a resistivity between 200-4,000 Ω-cm with a |TCR| between 2.9%/K to 3.9%/K. Future devices may require higher TCR materials, however, higher TCR is loosely associated with higher resistivity and therefore also with high noise. This work compares 1/f noise of high resistivity VOxand Ge:H thin films having |TCR| < 3.6%/K. The high TCR thin films of VOxwere found to be amorphous while, depending on the deposition conditions, the Ge:H thin films were either amorphous or mixed phase of amorphous + nanocrystalline. Evaluation of these VOx and Ge:H thin films indicates a prospects for a superior process-property relation of 1/f noise in Ge:H thin films in comparison with thin films of VOx.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XL
PublisherSPIE
ISBN (Print)9781628410075
DOIs
StatePublished - Jan 1 2014
Event40th Conference on Infrared Technology and Applications - Baltimore, MD, United States
Duration: May 5 2014May 8 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9070
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other40th Conference on Infrared Technology and Applications
CountryUnited States
CityBaltimore, MD
Period5/5/145/8/14

Fingerprint

1/f Noise
Infrared imaging
Thin Films
Imaging
Thin films
evaluation
Vanadium
Evaluation
vanadium oxides
thin films
Resistivity
Oxides
electrical resistivity
Germanium
Microbolometer
Infrared Imaging
Silicon
germanium

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Basantani, H. A., Saint John, D. B., Podraza, N. J., Jackson, T. N., & Horn, M. W. (2014). Evaluation of 1/f noise in prospective IR imaging thin films. In Infrared Technology and Applications XL [90701P] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9070). SPIE. https://doi.org/10.1117/12.2054652
Basantani, Hitesh A. ; Saint John, David B. ; Podraza, Nikolas J. ; Jackson, Thomas N. ; Horn, Mark W. / Evaluation of 1/f noise in prospective IR imaging thin films. Infrared Technology and Applications XL. SPIE, 2014. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Vanadium oxide (VOx) and hydrogenated silicon germanium (Si xGe1-x) are the two predominant thin film material systems used as the active layer in resistive infrared imaging. Thin films of VOx used in microbolometers have a resistivity typically between 0.1 and 1 Ω-cm with a temperature coefficient of resistance, |TCR| between 1.4{\%}/K to 2.4{\%}/K, while SixGe1-x:H thin films have a resistivity between 200-4,000 Ω-cm with a |TCR| between 2.9{\%}/K to 3.9{\%}/K. Future devices may require higher TCR materials, however, higher TCR is loosely associated with higher resistivity and therefore also with high noise. This work compares 1/f noise of high resistivity VOxand Ge:H thin films having |TCR| < 3.6{\%}/K. The high TCR thin films of VOxwere found to be amorphous while, depending on the deposition conditions, the Ge:H thin films were either amorphous or mixed phase of amorphous + nanocrystalline. Evaluation of these VOx and Ge:H thin films indicates a prospects for a superior process-property relation of 1/f noise in Ge:H thin films in comparison with thin films of VOx.",
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Basantani, HA, Saint John, DB, Podraza, NJ, Jackson, TN & Horn, MW 2014, Evaluation of 1/f noise in prospective IR imaging thin films. in Infrared Technology and Applications XL., 90701P, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9070, SPIE, 40th Conference on Infrared Technology and Applications, Baltimore, MD, United States, 5/5/14. https://doi.org/10.1117/12.2054652

Evaluation of 1/f noise in prospective IR imaging thin films. / Basantani, Hitesh A.; Saint John, David B.; Podraza, Nikolas J.; Jackson, Thomas N.; Horn, Mark W.

Infrared Technology and Applications XL. SPIE, 2014. 90701P (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9070).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Vanadium oxide (VOx) and hydrogenated silicon germanium (Si xGe1-x) are the two predominant thin film material systems used as the active layer in resistive infrared imaging. Thin films of VOx used in microbolometers have a resistivity typically between 0.1 and 1 Ω-cm with a temperature coefficient of resistance, |TCR| between 1.4%/K to 2.4%/K, while SixGe1-x:H thin films have a resistivity between 200-4,000 Ω-cm with a |TCR| between 2.9%/K to 3.9%/K. Future devices may require higher TCR materials, however, higher TCR is loosely associated with higher resistivity and therefore also with high noise. This work compares 1/f noise of high resistivity VOxand Ge:H thin films having |TCR| < 3.6%/K. The high TCR thin films of VOxwere found to be amorphous while, depending on the deposition conditions, the Ge:H thin films were either amorphous or mixed phase of amorphous + nanocrystalline. Evaluation of these VOx and Ge:H thin films indicates a prospects for a superior process-property relation of 1/f noise in Ge:H thin films in comparison with thin films of VOx.

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Basantani HA, Saint John DB, Podraza NJ, Jackson TN, Horn MW. Evaluation of 1/f noise in prospective IR imaging thin films. In Infrared Technology and Applications XL. SPIE. 2014. 90701P. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2054652