Evaluation of an automated modeling tool applied to new 600 v, 2 a vertical GaN transistors

Grace Watt, Alan Courtay, Amy Romero, Rolando Burgos, Rongming Chu, Dushan Boroyevich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Power MOSFET Tool through Synopsys® Saber® can estimate static and dynamic behaviors of devices given measured static and dynamic characteristic curves. Model parameters are made accessible for behavior simulation and design optimization even if a datasheet is unavailable or more advanced device properties are in developmental stages. This functionality makes the tool ideal for predicting the behavior of a new GaN semiconductor in a circuit. Therefore, this paper first demonstrates a SiC model with accurate static and dynamic waveforms confirming the efficacy of the tool beyond Si. Second, this paper presents a model of a vertical GaN transistor using the Power MOSFET Tool which is compared against experimental static and dynamic measurements. The vertical GaN subcircuit model matches the experimental static results within 8.42% error. The model predicts the 8.48 ns turn-on and 30.2 turn-off time within a couple nanoseconds. With optimization of the parasitic elements in the circuit, the model matches the rise and fall rates as well as the frequency and magnitude of the ringing. Therefore, the model would simulate reliable switching times and losses critical for predicting devices' behavior in prospective applications.

Original languageEnglish (US)
Title of host publication34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2920-2927
Number of pages8
ISBN (Electronic)9781538683309
DOIs
StatePublished - May 24 2019
Event34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, United States
Duration: Mar 17 2019Mar 21 2019

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume2019-March

Conference

Conference34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
CountryUnited States
CityAnaheim
Period3/17/193/21/19

Fingerprint

Transistors
Networks (circuits)
Semiconductor materials
Power MOSFET

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Watt, G., Courtay, A., Romero, A., Burgos, R., Chu, R., & Boroyevich, D. (2019). Evaluation of an automated modeling tool applied to new 600 v, 2 a vertical GaN transistors. In 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 (pp. 2920-2927). [8721880] (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2019.8721880
Watt, Grace ; Courtay, Alan ; Romero, Amy ; Burgos, Rolando ; Chu, Rongming ; Boroyevich, Dushan. / Evaluation of an automated modeling tool applied to new 600 v, 2 a vertical GaN transistors. 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 2920-2927 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).
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Watt, G, Courtay, A, Romero, A, Burgos, R, Chu, R & Boroyevich, D 2019, Evaluation of an automated modeling tool applied to new 600 v, 2 a vertical GaN transistors. in 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019., 8721880, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., pp. 2920-2927, 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019, Anaheim, United States, 3/17/19. https://doi.org/10.1109/APEC.2019.8721880

Evaluation of an automated modeling tool applied to new 600 v, 2 a vertical GaN transistors. / Watt, Grace; Courtay, Alan; Romero, Amy; Burgos, Rolando; Chu, Rongming; Boroyevich, Dushan.

34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2920-2927 8721880 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Watt G, Courtay A, Romero A, Burgos R, Chu R, Boroyevich D. Evaluation of an automated modeling tool applied to new 600 v, 2 a vertical GaN transistors. In 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 2920-2927. 8721880. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). https://doi.org/10.1109/APEC.2019.8721880