Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials

M. F. MacMillan, W. Mitchel, J. Blevins, G. Landis, J. Daniel, R. S. Sandhu, G. Chung, M. Spaulding, T. F. Zoes, E. Emorhokpor, C. Basceri, J. Jenny, E. Berkman, Wolfgang Jantz, W. Eichhorn, A. Blew, J. D. Oliver, Mark Andrew Fanton, Tim Bogart, Bill Eversson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon carbide (SiC) substrates offer an attractive template for the development of gallium nitride-based semiconductor materials device technologies for the advancement of high power solid-state microwave and millimeter wave circuits in the commercial and military defense markets. To ensure that the resistivity specifications of semi insulating (SI) are accurately determined and reported, the SEMI North American SiC Task Force has completed a first round robin test activity which includes evaluating contact and non-contact test methods employed to report high resistivity values for SiC semiconductor materials. Results from the round robin are aligned with customer requirements for the development of a semi-insulating specification and test method for SiC substrates.

Original languageEnglish (US)
Title of host publication2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
StatePublished - Dec 1 2008
Event23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States
Duration: Apr 14 2008Apr 17 2008

Publication series

Name2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Other

Other23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
CountryUnited States
CityChicago, IL
Period4/14/084/17/08

Fingerprint

Silicon carbide
Semiconductor materials
Specifications
Gallium nitride
Substrates
Millimeter waves
Microwaves
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

MacMillan, M. F., Mitchel, W., Blevins, J., Landis, G., Daniel, J., Sandhu, R. S., ... Eversson, B. (2008). Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials. In 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).
MacMillan, M. F. ; Mitchel, W. ; Blevins, J. ; Landis, G. ; Daniel, J. ; Sandhu, R. S. ; Chung, G. ; Spaulding, M. ; Zoes, T. F. ; Emorhokpor, E. ; Basceri, C. ; Jenny, J. ; Berkman, E. ; Jantz, Wolfgang ; Eichhorn, W. ; Blew, A. ; Oliver, J. D. ; Fanton, Mark Andrew ; Bogart, Tim ; Eversson, Bill. / Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials. 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008. 2008. (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).
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abstract = "Silicon carbide (SiC) substrates offer an attractive template for the development of gallium nitride-based semiconductor materials device technologies for the advancement of high power solid-state microwave and millimeter wave circuits in the commercial and military defense markets. To ensure that the resistivity specifications of semi insulating (SI) are accurately determined and reported, the SEMI North American SiC Task Force has completed a first round robin test activity which includes evaluating contact and non-contact test methods employed to report high resistivity values for SiC semiconductor materials. Results from the round robin are aligned with customer requirements for the development of a semi-insulating specification and test method for SiC substrates.",
author = "MacMillan, {M. F.} and W. Mitchel and J. Blevins and G. Landis and J. Daniel and Sandhu, {R. S.} and G. Chung and M. Spaulding and Zoes, {T. F.} and E. Emorhokpor and C. Basceri and J. Jenny and E. Berkman and Wolfgang Jantz and W. Eichhorn and A. Blew and Oliver, {J. D.} and Fanton, {Mark Andrew} and Tim Bogart and Bill Eversson",
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MacMillan, MF, Mitchel, W, Blevins, J, Landis, G, Daniel, J, Sandhu, RS, Chung, G, Spaulding, M, Zoes, TF, Emorhokpor, E, Basceri, C, Jenny, J, Berkman, E, Jantz, W, Eichhorn, W, Blew, A, Oliver, JD, Fanton, MA, Bogart, T & Eversson, B 2008, Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials. in 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008. 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008, 23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008, Chicago, IL, United States, 4/14/08.

Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials. / MacMillan, M. F.; Mitchel, W.; Blevins, J.; Landis, G.; Daniel, J.; Sandhu, R. S.; Chung, G.; Spaulding, M.; Zoes, T. F.; Emorhokpor, E.; Basceri, C.; Jenny, J.; Berkman, E.; Jantz, Wolfgang; Eichhorn, W.; Blew, A.; Oliver, J. D.; Fanton, Mark Andrew; Bogart, Tim; Eversson, Bill.

2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008. 2008. (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials

AU - MacMillan, M. F.

AU - Mitchel, W.

AU - Blevins, J.

AU - Landis, G.

AU - Daniel, J.

AU - Sandhu, R. S.

AU - Chung, G.

AU - Spaulding, M.

AU - Zoes, T. F.

AU - Emorhokpor, E.

AU - Basceri, C.

AU - Jenny, J.

AU - Berkman, E.

AU - Jantz, Wolfgang

AU - Eichhorn, W.

AU - Blew, A.

AU - Oliver, J. D.

AU - Fanton, Mark Andrew

AU - Bogart, Tim

AU - Eversson, Bill

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Silicon carbide (SiC) substrates offer an attractive template for the development of gallium nitride-based semiconductor materials device technologies for the advancement of high power solid-state microwave and millimeter wave circuits in the commercial and military defense markets. To ensure that the resistivity specifications of semi insulating (SI) are accurately determined and reported, the SEMI North American SiC Task Force has completed a first round robin test activity which includes evaluating contact and non-contact test methods employed to report high resistivity values for SiC semiconductor materials. Results from the round robin are aligned with customer requirements for the development of a semi-insulating specification and test method for SiC substrates.

AB - Silicon carbide (SiC) substrates offer an attractive template for the development of gallium nitride-based semiconductor materials device technologies for the advancement of high power solid-state microwave and millimeter wave circuits in the commercial and military defense markets. To ensure that the resistivity specifications of semi insulating (SI) are accurately determined and reported, the SEMI North American SiC Task Force has completed a first round robin test activity which includes evaluating contact and non-contact test methods employed to report high resistivity values for SiC semiconductor materials. Results from the round robin are aligned with customer requirements for the development of a semi-insulating specification and test method for SiC substrates.

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M3 - Conference contribution

SN - 1893580113

SN - 9781893580114

T3 - 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

BT - 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

ER -

MacMillan MF, Mitchel W, Blevins J, Landis G, Daniel J, Sandhu RS et al. Evaluation of test methods employed for characterizing semi-insulating nature of monocrystaline SiC semiconductor materials. In 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008. 2008. (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).