Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

Sean E. Curry, P. M. Lenahan, D. T. Krick, J. Kanicki, C. T. Kirk

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.

Original languageEnglish (US)
Pages (from-to)1359-1361
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number14
DOIs
StatePublished - Dec 1 1990

Fingerprint

silicon nitrides
trapping
carrier injection
electrical measurement
nitrides
electron paramagnetic resonance
electrons
capacitance
illumination
silicon dioxide
electric fields
energy
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.",
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Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films. / Curry, Sean E.; Lenahan, P. M.; Krick, D. T.; Kanicki, J.; Kirk, C. T.

In: Applied Physics Letters, Vol. 56, No. 14, 01.12.1990, p. 1359-1361.

Research output: Contribution to journalArticle

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AU - Kanicki, J.

AU - Kirk, C. T.

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