Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

Sean E. Curry; P. M. Lenahan; D. T. Krick; J. Kanicki; C. T. Kirk

doi:10.1063/1.102514

Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

Sean E. Curry, P. M. Lenahan, D. T. Krick, J. Kanicki, C. T. Kirk

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.

Original language	English (US)
Pages (from-to)	1359-1361
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	14
DOIs	https://doi.org/10.1063/1.102514
State	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.102514

Cite this

@article{0716af53f8f042aaaf5a7970dceb7e66,

title = "Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films",

abstract = "We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.",

author = "Curry, {Sean E.} and Lenahan, {P. M.} and Krick, {D. T.} and J. Kanicki and Kirk, {C. T.}",

year = "1990",

doi = "10.1063/1.102514",

language = "English (US)",

volume = "56",

pages = "1359--1361",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

AU - Curry, Sean E.

AU - Lenahan, P. M.

AU - Krick, D. T.

AU - Kanicki, J.

AU - Kirk, C. T.

PY - 1990

Y1 - 1990

N2 - We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.

AB - We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.

UR - http://www.scopus.com/inward/record.url?scp=0347353858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347353858&partnerID=8YFLogxK

U2 - 10.1063/1.102514

DO - 10.1063/1.102514

M3 - Article

AN - SCOPUS:0347353858

SN - 0003-6951

VL - 56

SP - 1359

EP - 1361

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this