Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

Sean E. Curry, P. M. Lenahan, D. T. Krick, J. Kanicki, C. T. Kirk

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Abstract

We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.

Original languageEnglish (US)
Pages (from-to)1359-1361
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number14
DOIs
StatePublished - Dec 1 1990

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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