Evidence for P b center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study

Thomas Aichinger, Patrick M. Lenahan, Tibor Grasser, Gregor Pobegen, Michael Nelhiebel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We study deep level defects at the Si/SiO 2 interface of 30nm and 5nm SiO 2 PMOS devices after negative bias temperature stress (NBTS). Electrical characterization using the direct-current current-voltage (DCIV) technique reveals two defects with different energy levels, recovery and degradation dynamics. To investigate their micro-physical nature, we perform spin dependent recombination (SDR). Besides conventional P b centers we also find evidence for P b center-hydrogen complexes.

Original languageEnglish (US)
Title of host publication2012 IEEE International Reliability Physics Symposium, IRPS 2012
PagesXT.2.1-XT.2.6
DOIs
Publication statusPublished - Sep 28 2012
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
Duration: Apr 15 2012Apr 19 2012

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CountryUnited States
CityAnaheim, CA
Period4/15/124/19/12

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Aichinger, T., Lenahan, P. M., Grasser, T., Pobegen, G., & Nelhiebel, M. (2012). Evidence for P b center-hydrogen complexes after subjecting PMOS devices to NBTI stress - A combined DCIV/SDR study. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 (pp. XT.2.1-XT.2.6). [6241932] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2012.6241932