EVIDENCE FOR POLYCRYSTALLINE Si SURFACE LAYER FORMATION BY ARGON IMPLANTATION AND ITS PASSIVATION BY ATOMIC HYDROGEN.

H. C. Chien, S. Ashok, J. H. Slowik

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al/p-Si Schottky barriers formed on wafers implanted with 10-20 keV Ar exhibit low-temperature electrical properties characteristic of grain boundary transport. Subsequent low-energy (0. 4 keV), high fluence (approximately 10E18 cm** minus **2) H implant is found to passivate the grain boundaries of the Ar implant-induced microcrystals. Extreme high Al/p-Si Schottky barrier heights are obtained following the dual implants, and deep level transient spectroscopy (DLTS) measurements reveal that H also alters the properties of traps introduced by the Ar implant, thus improving the diode characteristics.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsR.E. Howard, E.L. Hu, S. Namba, S. Pang
PublisherMaterials Research Soc
Pages203-207
Number of pages5
Volume76
ISBN (Print)0931837421
StatePublished - 1987

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Argon
Passivation
Hydrogen
Grain boundaries
Microcrystals
Deep level transient spectroscopy
Diodes
Electric properties
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Chien, H. C., Ashok, S., & Slowik, J. H. (1987). EVIDENCE FOR POLYCRYSTALLINE Si SURFACE LAYER FORMATION BY ARGON IMPLANTATION AND ITS PASSIVATION BY ATOMIC HYDROGEN. In R. E. Howard, E. L. Hu, S. Namba, & S. Pang (Eds.), Materials Research Society Symposia Proceedings (Vol. 76, pp. 203-207). Materials Research Soc.
Chien, H. C. ; Ashok, S. ; Slowik, J. H. / EVIDENCE FOR POLYCRYSTALLINE Si SURFACE LAYER FORMATION BY ARGON IMPLANTATION AND ITS PASSIVATION BY ATOMIC HYDROGEN. Materials Research Society Symposia Proceedings. editor / R.E. Howard ; E.L. Hu ; S. Namba ; S. Pang. Vol. 76 Materials Research Soc, 1987. pp. 203-207
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abstract = "Al/p-Si Schottky barriers formed on wafers implanted with 10-20 keV Ar exhibit low-temperature electrical properties characteristic of grain boundary transport. Subsequent low-energy (0. 4 keV), high fluence (approximately 10E18 cm** minus **2) H implant is found to passivate the grain boundaries of the Ar implant-induced microcrystals. Extreme high Al/p-Si Schottky barrier heights are obtained following the dual implants, and deep level transient spectroscopy (DLTS) measurements reveal that H also alters the properties of traps introduced by the Ar implant, thus improving the diode characteristics.",
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Chien, HC, Ashok, S & Slowik, JH 1987, EVIDENCE FOR POLYCRYSTALLINE Si SURFACE LAYER FORMATION BY ARGON IMPLANTATION AND ITS PASSIVATION BY ATOMIC HYDROGEN. in RE Howard, EL Hu, S Namba & S Pang (eds), Materials Research Society Symposia Proceedings. vol. 76, Materials Research Soc, pp. 203-207.

EVIDENCE FOR POLYCRYSTALLINE Si SURFACE LAYER FORMATION BY ARGON IMPLANTATION AND ITS PASSIVATION BY ATOMIC HYDROGEN. / Chien, H. C.; Ashok, S.; Slowik, J. H.

Materials Research Society Symposia Proceedings. ed. / R.E. Howard; E.L. Hu; S. Namba; S. Pang. Vol. 76 Materials Research Soc, 1987. p. 203-207.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chien HC, Ashok S, Slowik JH. EVIDENCE FOR POLYCRYSTALLINE Si SURFACE LAYER FORMATION BY ARGON IMPLANTATION AND ITS PASSIVATION BY ATOMIC HYDROGEN. In Howard RE, Hu EL, Namba S, Pang S, editors, Materials Research Society Symposia Proceedings. Vol. 76. Materials Research Soc. 1987. p. 203-207