Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)