Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

S. A. Ringel, H. C. Chien, S. Ashok

Research output: Contribution to journalArticlepeer-review

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Abstract

Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

Original languageEnglish (US)
Pages (from-to)728-730
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number12
DOIs
StatePublished - 1986

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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