Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

S. A. Ringel, H. C. Chien, S Ashok

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

Original languageEnglish (US)
Pages (from-to)728-730
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number12
DOIs
StatePublished - Dec 1 1986

Fingerprint

passivity
implantation
argon
silicon
hydrogen
electrical measurement
grain boundaries
damage
dosage
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{14b21ccc58b54362a0ae5d6f01b582ca,
title = "Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen",
abstract = "Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.",
author = "Ringel, {S. A.} and Chien, {H. C.} and S Ashok",
year = "1986",
month = "12",
day = "1",
doi = "10.1063/1.97581",
language = "English (US)",
volume = "49",
pages = "728--730",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen. / Ringel, S. A.; Chien, H. C.; Ashok, S.

In: Applied Physics Letters, Vol. 49, No. 12, 01.12.1986, p. 728-730.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

AU - Ringel, S. A.

AU - Chien, H. C.

AU - Ashok, S

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

AB - Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm- 2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.

UR - http://www.scopus.com/inward/record.url?scp=36549103850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549103850&partnerID=8YFLogxK

U2 - 10.1063/1.97581

DO - 10.1063/1.97581

M3 - Article

AN - SCOPUS:36549103850

VL - 49

SP - 728

EP - 730

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -