Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed laser deposition through magneto-transport measurements

Y. F. Lee, S. Punugupati, F. Wu, Z. Jin, J. Narayan, Justin Schwartz

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 ∥ (0001) Al2O3 and [21 10] Bi2Se3 ∥ [2110] Al2O3 (or) [2110] Bi2Se3 par; [1120] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.

Original languageEnglish (US)
Pages (from-to)279-285
Number of pages7
JournalCurrent Opinion in Solid State and Materials Science
Volume18
Issue number5
DOIs
StatePublished - Jan 1 2014

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Epitaxial films
Surface states
Magnetoresistance
Pulsed laser deposition
Epitaxial growth
Thin films
Epitaxial layers
Photoelectron spectroscopy
X ray spectroscopy
Electron diffraction
Diffraction patterns
Monolayers
X ray diffraction
Substrates
1-dodecylpyridoxal

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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title = "Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed laser deposition through magneto-transport measurements",
abstract = "We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13{\%} lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 ∥ (0001) Al2O3 and [21 10] Bi2Se3 ∥ [2110] Al2O3 (or) [2110] Bi2Se3 par; [1120] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.",
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Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed laser deposition through magneto-transport measurements. / Lee, Y. F.; Punugupati, S.; Wu, F.; Jin, Z.; Narayan, J.; Schwartz, Justin.

In: Current Opinion in Solid State and Materials Science, Vol. 18, No. 5, 01.01.2014, p. 279-285.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Lee, Y. F.

AU - Punugupati, S.

AU - Wu, F.

AU - Jin, Z.

AU - Narayan, J.

AU - Schwartz, Justin

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AB - We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 ∥ (0001) Al2O3 and [21 10] Bi2Se3 ∥ [2110] Al2O3 (or) [2110] Bi2Se3 par; [1120] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.

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