We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 ∥ (0001) Al2O3 and [21 10] Bi2Se3 ∥  Al2O3 (or)  Bi2Se3 par;  Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.
|Original language||English (US)|
|Number of pages||7|
|Journal||Current Opinion in Solid State and Materials Science|
|State||Published - Jan 1 2014|
All Science Journal Classification (ASJC) codes
- Materials Science(all)