Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed laser deposition through magneto-transport measurements

Y. F. Lee, S. Punugupati, F. Wu, Z. Jin, J. Narayan, J. Schwartz

Research output: Contribution to journalArticle

18 Scopus citations


We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0001) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0001) Bi2Se3 ∥ (0001) Al2O3 and [21 10] Bi2Se3 ∥ [2110] Al2O3 (or) [2110] Bi2Se3 par; [1120] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.

Original languageEnglish (US)
Pages (from-to)279-285
Number of pages7
JournalCurrent Opinion in Solid State and Materials Science
Issue number5
StatePublished - Jan 1 2014


All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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