Evidence of Space-Charge-Limited Current in Amorphous Silicon Schottky Diodes

S. Ashok, A. Lester, S. J. Fonash

Research output: Contribution to journalArticle

50 Scopus citations

Abstract

Palladium/amorphous silicon (a-SiHx) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.

Original languageEnglish (US)
Pages (from-to)200-202
Number of pages3
JournalIEEE Electron Device Letters
Volume1
Issue number10
DOIs
StatePublished - Oct 1980

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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