Evidence of tunnel-assisted transport in nondegenerate MOS and semiconductor-oxide-semiconductor diodes at room temperature

S. Kar, S. Ashok, S. J. Fonash

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Metal-oxide-semiconductor diodes have been fabricated on p-type Wacker polycrystalline silicon with aluminum barrier metal, and semiconductor-oxide- semiconductor diodes have been fabricated by chemical spraying of indium-tin oxide on n-type single-crystal silicon. The current-voltage and capacitance-voltage characteristics of these diodes have been measured at various values of temperature above 300 K and analyzed. The results indicate the likelihood of the primary transport mechanism's being multistep tunneling instead of thermionic emission or minority carrier injection. The study also stresses the importance of investigating the temperature dependence of electrical characteristics before any firm conclusions may be drawn about the conduction mechanisms in semiconductor junctions.

Original languageEnglish (US)
Pages (from-to)3417-3421
Number of pages5
JournalJournal of Applied Physics
Volume51
Issue number6
DOIs
StatePublished - Dec 1 1980

Fingerprint

semiconductor diodes
tunnels
semiconductor junctions
oxides
capacitance-voltage characteristics
carrier injection
thermionic emission
spraying
silicon
room temperature
minority carriers
metal oxide semiconductors
indium oxides
tin oxides
diodes
aluminum
conduction
temperature dependence
single crystals
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Evidence of tunnel-assisted transport in nondegenerate MOS and semiconductor-oxide-semiconductor diodes at room temperature. / Kar, S.; Ashok, S.; Fonash, S. J.

In: Journal of Applied Physics, Vol. 51, No. 6, 01.12.1980, p. 3417-3421.

Research output: Contribution to journalArticle

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