Evolution of Damage, Dopant Deactivation, and Hydrogen-Related Effects in Dry Etch Silicon as a Function of Annealing History

J. M. Heddleson, S. J. Fonash, M. W. Horn

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The inter-relation between near-surface lattice damage and hydrogen-related effects in both the near-surface and bulk of dry etched silicon is explored. Schottky barriers used to monitor the physical etching damage show an evolution of the near-surface region during annealing that indicates hydrogen from the etch can be passivating some of the damage and affecting the electrical properties of contacts fabricated on the etched material. Spreading resistance measurements on corresponding samples allow this effect to be compared to the evolution of hydrogen-related bulk effects.

Original languageEnglish (US)
Pages (from-to)1960-1964
Number of pages5
JournalJournal of the Electrochemical Society
Volume137
Issue number6
DOIs
StatePublished - Jun 1990

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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