Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing

S. I. Maximenko, J. A. Freitas, N. Y. Garces, E. R. Glaser, Mark Andrew Fanton

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The influence of postgrowth high-temperature anneals between 1400°C and 2400°C on the behavior of the D 1 center in semi-insulating 4H-SiC was studied by photoluminescence. The optical signature of D 1 was observed up to 2400°C with intensity maxima at 1700°C and 2200°C. It was also found that changes in the postannealing cooling rate drastically influence the behavior of the D 1 center and the concentrations of the V C, V Si, V C-V Si, and V C-C Si lattice defects observed from electron paramagnetic resonance experiments. The change in intensity of the D 1 defect has some correlation with the intensity change of the V C-V Si pair defect at temperatures above 1900°C. In addition, infrared photoluminescence spectroscopy studies showed that changes in the intensity of the D 1 defect at 2100°C to 2400°C annealing temperatures and variable cool-down rates have close correlation with intensity changes of the UD2 defect.

Original languageEnglish (US)
Pages (from-to)551-556
Number of pages6
JournalJournal of Electronic Materials
Volume38
Issue number4
DOIs
StatePublished - Apr 1 2009

Fingerprint

Annealing
Defects
annealing
defects
Substrates
Temperature
Photoluminescence spectroscopy
Crystal defects
photoluminescence
Paramagnetic resonance
Infrared spectroscopy
Photoluminescence
Cooling
electron paramagnetic resonance
signatures
cooling
temperature
Experiments
spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Maximenko, S. I. ; Freitas, J. A. ; Garces, N. Y. ; Glaser, E. R. ; Fanton, Mark Andrew. / Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing. In: Journal of Electronic Materials. 2009 ; Vol. 38, No. 4. pp. 551-556.
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Evolution of deep defect centers in semi-insulating 4H-SiC substrates under high-temperature annealing. / Maximenko, S. I.; Freitas, J. A.; Garces, N. Y.; Glaser, E. R.; Fanton, Mark Andrew.

In: Journal of Electronic Materials, Vol. 38, No. 4, 01.04.2009, p. 551-556.

Research output: Contribution to journalArticle

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AU - Freitas, J. A.

AU - Garces, N. Y.

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AU - Fanton, Mark Andrew

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