Evolution of D1-defect center in 4H-SiC during high temperature annealing

S. I. Maximenko, J. A. Freitas, N. Y. Garces, E. R. Glaser, M. A. Fanton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The behavior of the D1 center in semi-insulating 4H-SiC substrates revealed by low-temperature photoluminescence was investigated after post-growth high temperature anneals between 1400 and 2400°C. The influence of different post-anneal cooling rates was also studied. The optical signature of D1 was observed up to 2400°C with intensity maxima at 1700 and 2200°C. We propose that the peak at 1700°C can be related to the formation and subsequent dissociation of Sic native defects. It was found that changes in the post-annealing cooling rate drastically influence the behavior of the D1 center and the concentrations of the VC, V Si, VC-VSi and VC-CSi lattice defects.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages429-432
Number of pages4
ISBN (Print)9780878493579
DOIs
StatePublished - Jan 1 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Maximenko, S. I., Freitas, J. A., Garces, N. Y., Glaser, E. R., & Fanton, M. A. (2009). Evolution of D1-defect center in 4H-SiC during high temperature annealing. In A. Suzuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & T. Fuyuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 429-432). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908453-11-9.429