Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates

Abhishek Jain, Srinivasan Raghavan, Joan M. Redwing

Research output: Contribution to journalConference article

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Abstract

The evolution of surface morphology and film stress during metalorganic chemical vapor deposition (MOCVD) growth of InN on sapphire substrates was investigated. In situ stress measurements were carried out using a multi-beam optical stress sensor system, which measures changes in sample curvature during film deposition. Growth of InN on a low temperature AlN buffer layer on sapphire was observed to occur via island nucleation and coalescence. A constant tensile growth stress of approximately 0.2GPa was measured in the InN films for thickness < 200nm. For films thicker than approximately 200nm, growth continued at almost zero stress. This corresponded to the point at which film delamination was observed to occur at growth temperature. This undesirable stress relief mechanism limits the thickness of InN layers that were grown by MOCVD on sapphire using an AlN buffer layer.

Original languageEnglish (US)
Pages (from-to)128-133
Number of pages6
JournalJournal of Crystal Growth
Volume269
Issue number1
DOIs
Publication statusPublished - Aug 15 2004
EventProceedings of the First ONR International Indium Nitride Work - Fremantle, Australia
Duration: Nov 16 2003Nov 20 2003

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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