Excellent resistive switching characteristics of Cu doped ZrO2 and its 64 bit cross-point integration

Ming Liu, Weihua Guan, Shibing Long, Qi Liu, Wei Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO2 memory devices with the sandwiched structure of Cu/ZrO 2:Cu/Pt. The ratio between the high and low resistance is in the order of 106. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns, respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is demonstrated to be related with the formation and rupture of Cu conductive bridge. Based on this working cell, 64 bit cross-point array is fabricated and tested.

Original languageEnglish (US)
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages905-908
Number of pages4
DOIs
Publication statusPublished - Dec 1 2008
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: Oct 20 2008Oct 23 2008

Publication series

NameInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period10/20/0810/23/08

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Liu, M., Guan, W., Long, S., Liu, Q., & Wang, W. (2008). Excellent resistive switching characteristics of Cu doped ZrO2 and its 64 bit cross-point integration. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 905-908). [4734692] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734692