Exceptional Points in Random-Defect Phonon Lasers

H. Lü, S. K. Özdemir, L. M. Kuang, Franco Nori, H. Jing

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Intrinsic defects in optomechanical devices are generally viewed to be detrimental for achieving coherent amplification of phonons, and great care has thus been exercised in fabricating devices and materials with no (or a minimal number of) defects. Contrary to this view, here we show that, by surpassing an exceptional point (EP), both the mechanical gain and the phonon number can be enhanced despite increasing defect losses. This counterintuitive effect, well described by an effective non-Hermitian phonon-defect model, provides a mechanical analog of the loss-induced purely optical lasing. This opens the way to operating random-defect phonon devices at EPs.

Original languageEnglish (US)
Article number044020
JournalPhysical Review Applied
Volume8
Issue number4
DOIs
StatePublished - Oct 27 2017

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defects
lasers
lasing
phonons
analogs

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lü, H. ; Özdemir, S. K. ; Kuang, L. M. ; Nori, Franco ; Jing, H. / Exceptional Points in Random-Defect Phonon Lasers. In: Physical Review Applied. 2017 ; Vol. 8, No. 4.
@article{69b688465a8049c7b71d38e3679256ef,
title = "Exceptional Points in Random-Defect Phonon Lasers",
abstract = "Intrinsic defects in optomechanical devices are generally viewed to be detrimental for achieving coherent amplification of phonons, and great care has thus been exercised in fabricating devices and materials with no (or a minimal number of) defects. Contrary to this view, here we show that, by surpassing an exceptional point (EP), both the mechanical gain and the phonon number can be enhanced despite increasing defect losses. This counterintuitive effect, well described by an effective non-Hermitian phonon-defect model, provides a mechanical analog of the loss-induced purely optical lasing. This opens the way to operating random-defect phonon devices at EPs.",
author = "H. L{\"u} and {\"O}zdemir, {S. K.} and Kuang, {L. M.} and Franco Nori and H. Jing",
year = "2017",
month = "10",
day = "27",
doi = "10.1103/PhysRevApplied.8.044020",
language = "English (US)",
volume = "8",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "4",

}

Exceptional Points in Random-Defect Phonon Lasers. / Lü, H.; Özdemir, S. K.; Kuang, L. M.; Nori, Franco; Jing, H.

In: Physical Review Applied, Vol. 8, No. 4, 044020, 27.10.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Exceptional Points in Random-Defect Phonon Lasers

AU - Lü, H.

AU - Özdemir, S. K.

AU - Kuang, L. M.

AU - Nori, Franco

AU - Jing, H.

PY - 2017/10/27

Y1 - 2017/10/27

N2 - Intrinsic defects in optomechanical devices are generally viewed to be detrimental for achieving coherent amplification of phonons, and great care has thus been exercised in fabricating devices and materials with no (or a minimal number of) defects. Contrary to this view, here we show that, by surpassing an exceptional point (EP), both the mechanical gain and the phonon number can be enhanced despite increasing defect losses. This counterintuitive effect, well described by an effective non-Hermitian phonon-defect model, provides a mechanical analog of the loss-induced purely optical lasing. This opens the way to operating random-defect phonon devices at EPs.

AB - Intrinsic defects in optomechanical devices are generally viewed to be detrimental for achieving coherent amplification of phonons, and great care has thus been exercised in fabricating devices and materials with no (or a minimal number of) defects. Contrary to this view, here we show that, by surpassing an exceptional point (EP), both the mechanical gain and the phonon number can be enhanced despite increasing defect losses. This counterintuitive effect, well described by an effective non-Hermitian phonon-defect model, provides a mechanical analog of the loss-induced purely optical lasing. This opens the way to operating random-defect phonon devices at EPs.

UR - http://www.scopus.com/inward/record.url?scp=85032895206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032895206&partnerID=8YFLogxK

U2 - 10.1103/PhysRevApplied.8.044020

DO - 10.1103/PhysRevApplied.8.044020

M3 - Article

AN - SCOPUS:85032895206

VL - 8

JO - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 4

M1 - 044020

ER -