Exchange biasing of the ferromagnetic semiconductor Ga 1-xMn xAs

K. F. Eid, M. B. Stone, K. C. Ku, O. Maksimov, P. Schiffer, N. Samarth, T. C. Shin, C. J. Palmstrøm

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

The exchange coupling of the ferromagnetic semiconductor Ga 1-xMn xAs was investigated. A low temperature molecular beam epitaxy was used for the growth of the sample on (001) semi-insulating, epi-ready GaAs substrates. A comparison of the blocking temperature of the antiferromagnet (MnO) and the Curie temperature of the ferromagnet was performed. The dependence of the hysteresis loop parameters on the magnitude of the cooling fields was also investigated. From Rutherford backscattering (RBS) measurements, an increase in the channeling minimum yield, and an enhancement of the Ga channeling interface peak by ∼1×10 15 atoms/cm 2 were observed.

Original languageEnglish (US)
Pages (from-to)1556-1558
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number9
DOIs
StatePublished - Aug 30 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Exchange biasing of the ferromagnetic semiconductor Ga <sub>1-x</sub>Mn <sub>x</sub>As'. Together they form a unique fingerprint.

Cite this