Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)

K. F. Eid, M. B. Stone, O. Maksimov, T. C. Shih, K. C. Ku, W. Fadgen, C. J. Palmstrøm, P. Schiffer, N. Samarth

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Abstract

We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-x Mnx As) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.

Original languageEnglish (US)
Article number10D304
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
StatePublished - May 15 2005

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Eid, K. F., Stone, M. B., Maksimov, O., Shih, T. C., Ku, K. C., Fadgen, W., Palmstrøm, C. J., Schiffer, P., & Samarth, N. (2005). Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited). Journal of Applied Physics, 97(10), [10D304]. https://doi.org/10.1063/1.1846033