Exciton spin polarization in magnetic semiconductor quantum wires

O. Ray, A. A. Sirenko, J. J. Berry, N. Samarth, J. A. Gupta, I. Malajovich, D. D. Awschalom

Research output: Contribution to journalArticle

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Electron-beam lithography and wet etching techniques are used to laterally pattern ZnSe/ (Zn,Cd,Mn)Se single quantum wells into magnetically active quantum wires with widths ranging from 20 to 80 nm. Photoluminescence spectroscopy as a function of wire width reveals a competition between elastic strain relaxation and quantum confinement. Magnetophotoluminescence measurements at low temperatures indicate a strong exciton spin polarization due to the sp-d exchange-enhanced spin splitting, ranging from 20% to 60% at 4 T.

Original languageEnglish (US)
Pages (from-to)1167-1169
Number of pages3
JournalApplied Physics Letters
Issue number9
Publication statusPublished - Feb 28 2000


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ray, O., Sirenko, A. A., Berry, J. J., Samarth, N., Gupta, J. A., Malajovich, I., & Awschalom, D. D. (2000). Exciton spin polarization in magnetic semiconductor quantum wires. Applied Physics Letters, 76(9), 1167-1169. https://doi.org/10.1063/1.125972