Experimental demonstration of 100nm channel length In0.53Ga 0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

S. Mookerjea, D. Mohata, R. Krishnan, J. Singh, A. Vallett, A. Ali, T. Mayer, Vijaykrishnan Narayanan, D. Schlom, A. Liu, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

72 Scopus citations

Abstract

Vertical In0.53Ga0.47As tunnel field effect transistors (TFETs) with 100nm channel length and highk/metal gate stack are demonstrated with high Ion/Ioff ratio (>10 4). At VDS = 0.75V, a record on-current of 20μA/μm is achieved due to higher tunneling rate in narrow tunnel gap In. 0.53Ga0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirming band to band tunneling. The measured data are in excellent agreement with two-dimensional numerical simulation at all drain biases. A novel 6T TFET SRAM cell using virtual ground assist is demonstrated despite the asymmetric source/drain configuration of TFETs.

Original languageEnglish (US)
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
StatePublished - Dec 1 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: Dec 7 2009Dec 9 2009

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period12/7/0912/9/09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Mookerjea, S., Mohata, D., Krishnan, R., Singh, J., Vallett, A., Ali, A., Mayer, T., Narayanan, V., Schlom, D., Liu, A., & Datta, S. (2009). Experimental demonstration of 100nm channel length In0.53Ga 0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest [5424355] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424355