Experimental demonstration of 100nm channel length In0.53Ga 0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

S. Mookerjea, D. Mohata, R. Krishnan, J. Singh, A. Vallett, A. Ali, T. Mayer, Vijaykrishnan Narayanan, D. Schlom, A. Liu, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

89 Scopus citations

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