Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Sang Woo Han, Jianan Song, Sang Ha Yoo, Ziguang Ma, Robert M. Lavelle, David W. Snyder, Joan M. Redwing, Thomas N. Jackson, Rongming Chu

Research output: Contribution to journalArticlepeer-review

Abstract

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

Original languageEnglish (US)
Article number9217445
Pages (from-to)1758-1761
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number12
DOIs
StatePublished - Dec 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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