Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2

Keliang He, Charles Poole, Kin Fai Mak, Jie Shan

Research output: Contribution to journalArticle

546 Scopus citations

Abstract

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ∼70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.

Original languageEnglish (US)
Pages (from-to)2931-2936
Number of pages6
JournalNano letters
Volume13
Issue number6
DOIs
StatePublished - Jun 12 2013

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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