Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2

Keliang He, Charles Poole, Kin Fai Mak, Jie Shan

Research output: Contribution to journalArticle

464 Citations (Scopus)

Abstract

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ∼70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.

Original languageEnglish (US)
Pages (from-to)2931-2936
Number of pages6
JournalNano letters
Volume13
Issue number6
DOIs
StatePublished - Jun 12 2013

Fingerprint

Flexible electronics
Photoluminescence spectroscopy
Tensile strain
Absorption spectroscopy
Optoelectronic devices
Electronic structure
Demonstrations
Tuning
tuning
electronic structure
Crystals
Substrates
absorption spectroscopy
photoluminescence
electronics
spectroscopy
crystals

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

He, Keliang ; Poole, Charles ; Mak, Kin Fai ; Shan, Jie. / Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2. In: Nano letters. 2013 ; Vol. 13, No. 6. pp. 2931-2936.
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Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2. / He, Keliang; Poole, Charles; Mak, Kin Fai; Shan, Jie.

In: Nano letters, Vol. 13, No. 6, 12.06.2013, p. 2931-2936.

Research output: Contribution to journalArticle

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