Experimental investigation of scalability and transport in In 0.7Ga0.3As multi-gate quantum well FET (MuQFET)

L. Liu, V. Saripalli, Vijaykrishnan Narayanan, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Compound semiconductors such as In0.7Ga0.3As and InSb are being actively researched as replacement for silicon channel materials for logic applications due to their superior transport properties [1,2]. Planar III-V quantum-well FETs have already demonstrated with superior performance than the state-of-the art Si MOSFETs for low supply voltage (Vcc) applications [1-3]. A key research challenge remains in addressing the scalability of III-V based quantum-well FETs to sub-14 nm node logic applications while still maintaining their excellent transport advantage. In this study, we demonstrate quasi-ballistic operation of non-planar, multi-gate, modulation doped, strained In0.7Ga0.3As quantum well FET (MuQFET), combining the electrostatic robustness of multi-gate configuration with the excellent electron mobility of high mobility quantum well channel, In0.7Ga 0.3As (Figure 1).

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages17-18
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period6/20/116/22/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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