Experimental observation of the quantum anomalous Hall effect in a magnetic topological Insulator

Cui Zu Chang, Jinsong Zhang, Xiao Feng, Jie Shen, Zuocheng Zhang, Minghua Guo, Kang Li, Yunbo Ou, Pang Wei, Li Li Wang, Zhong Qing Ji, Yang Feng, Shuaihua Ji, Xi Chen, Jinfeng Jia, Xi Dai, Zhong Fang, Shou Cheng Zhang, Ke He, Yayu WangLi Lu, Xu Cun Ma, Qi Kun Xue

Research output: Contribution to journalArticlepeer-review

1645 Scopus citations

Abstract

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e 2, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

Original languageEnglish (US)
Pages (from-to)167-170
Number of pages4
JournalScience
Volume340
Issue number6129
DOIs
StatePublished - Apr 12 2013

All Science Journal Classification (ASJC) codes

  • General

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