Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities

Dheeraj Mohata, Saurabh Mookerjea, Ashish Agrawal, Yuanyuan Li, Theresa Mayer, Vijaykrishnan Narayanan, Amy Liu, Dmitri Loubychev, Joel Fastenau, Suman Datta

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Abstract

In this paper, we experimentally demonstrate 100% enhancement in drive current (ION) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In 0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket (δ)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (λeff) for the double gate, thin-body configuration of the staggered heterojunction and δ-doped channel TFETs. The extracted λeff is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.

Original languageEnglish (US)
Article number24105
JournalApplied Physics Express
Volume4
Issue number2
DOIs
StatePublished - Feb 1 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Mohata, D., Mookerjea, S., Agrawal, A., Li, Y., Mayer, T., Narayanan, V., Liu, A., Loubychev, D., Fastenau, J., & Datta, S. (2011). Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities. Applied Physics Express, 4(2), [24105]. https://doi.org/10.1143/APEX.4.024105