Exploiting ferroelectric FETs for low-power non-volatile logic-in-memory circuits

Xunzhao Yin, Ahmedullah Aziz, Joseph Nahas, Suman Datta, Sumeet Gupta, Michael Niemier, Xiaobo Sharon Hu

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    27 Scopus citations

    Abstract

    Numerous research efforts are targeting new devices that could continue performance scaling trends associated with Moore's Law and/or accomplish computational tasks with less energy. One such device is the ferroelectric FET (FeFET), which offers the potential to be scaled beyond the end of the silicon roadmap as predicted by ITRS. Furthermore, the Ids vs. Vgs characteristics of FeFETs may allow a device to function as both a switch and a non-volatile storage element. We exploit this FeFET property to enable fine-grained logic-in-memory (LiM). We consider three different circuit design styles for FeFET-based LiM: complementary (differential), dynamic current mode, and dynamic logic. Our designs are compared with existing approaches for LiM (i.e., based on magnetic tunnel junctions (MTJs), CMOS, etc.) that afford the same circuit-level functionality. Assuming similar feature sizes, non-volatile FeFET-based LiM circuits are more efficient than functional equivalents based on MTJs when considering metrics such as propagation delay (2.9X, 6.8X) and dyanmic power (3.7X, 2.3X) (for 45 nm, 22 nm technology respectively). Compared to CMOS functional equivalents, FeFET designs still exhibit modest improvements in the aforementioned metrics while also offering non-volatility and reduced device count.

    Original languageEnglish (US)
    Title of host publication2016 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781450344661
    DOIs
    StatePublished - Nov 7 2016
    Event35th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2016 - Austin, United States
    Duration: Nov 7 2016Nov 10 2016

    Publication series

    NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
    Volume07-10-November-2016
    ISSN (Print)1092-3152

    Other

    Other35th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2016
    CountryUnited States
    CityAustin
    Period11/7/1611/10/16

    All Science Journal Classification (ASJC) codes

    • Software
    • Computer Science Applications
    • Computer Graphics and Computer-Aided Design

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