Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems

Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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