Exploring negative bias temperature instability in tri-gate mosfets through electrically detected magnetic resonance

Kenneth J. Myers, Patrick M. Lenahan, Brad C. Bittel, Inanc Meric

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

For decades, negative bias temperature instability (NBTI) has been on the forefront of transistor reliability concerns. Electrically detected magnetic resonance (EDMR) has provided significant insight regarding NBTI's atomic scale mechanisms in conventional (planar) metal oxide semiconductor field effect transistors (MOSFETs). More recently, however, tri-gate MOSFETs have become the prevailing devices in integrated circuity. In this study, we have investigated the atomic scale mechanisms of the NBTI in tri-gate MOSFETs. Also, for the first time, a direct comparison of EDMR responses is made between similarly processed planar and tri-gate FETs. We have done this by utilizing two EDMR techniques: spin dependent charge pumping and spin dependent trap assisted tunneling (SDTAT). Our results indicate both similarities and differences in the atomic scale mechanisms of NBTI in planar and tri-gate devices. Our work also introduces a new EDMR technique for the observation of NBTI defects generated within gate dielectrics: SDTAT.

Original languageEnglish (US)
Title of host publication2019 IEEE International Integrated Reliability Workshop, IIRW 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728122038
DOIs
StatePublished - Oct 2019
Event2019 IEEE International Integrated Reliability Workshop, IIRW 2019 - Fallen Leaf Lake, United States
Duration: Oct 13 2019Oct 17 2019

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2019-October

Conference

Conference2019 IEEE International Integrated Reliability Workshop, IIRW 2019
Country/TerritoryUnited States
CityFallen Leaf Lake
Period10/13/1910/17/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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