Extracting the Richardson constant: IrOx /n-ZnO Schottky diodes

K. Sarpatwari, O. O. Awadelkarim, M. W. Allen, S. M. Durbin, S. E. Mohney

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx /n-ZnO Schottky diodes. A homogeneous A value of 27±7 A cm-2 K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm-2 K-2 for n -type ZnO.

Original languageEnglish (US)
Article number242110
JournalApplied Physics Letters
Volume94
Issue number24
DOIs
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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