A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx /n-ZnO Schottky diodes. A homogeneous A value of 27±7 A cm-2 K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm-2 K-2 for n -type ZnO.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)