Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

K. Sarpatwari, N. S. Dellas, O. O. Awadelkarim, S. E. Mohney

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Geometrical and surface effects can significantly alter conduction through metal/semiconductor nanowire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current-voltage (I-V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metal/nanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I-V characteristics of a surround-gate axially-aligned θ-Ni2Si/n-Si nanowire Schottky barrier contact.

Original languageEnglish (US)
Pages (from-to)689-695
Number of pages7
JournalSolid-State Electronics
Volume54
Issue number7
DOIs
StatePublished - Jul 1 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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