Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

K. Sarpatwari, N. S. Dellas, Osama O. Awadelkarim, Suzanne E. Mohney

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Geometrical and surface effects can significantly alter conduction through metal/semiconductor nanowire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current-voltage (I-V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metal/nanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I-V characteristics of a surround-gate axially-aligned θ-Ni2Si/n-Si nanowire Schottky barrier contact.

Original languageEnglish (US)
Pages (from-to)689-695
Number of pages7
JournalSolid-State Electronics
Volume54
Issue number7
DOIs
StatePublished - Jul 1 2010

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Nanowires
nanowires
Semiconductor materials
Metals
metals
simulation
methodology
conduction
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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Extracting the Schottky barrier height from axial contacts to semiconductor nanowires. / Sarpatwari, K.; Dellas, N. S.; Awadelkarim, Osama O.; Mohney, Suzanne E.

In: Solid-State Electronics, Vol. 54, No. 7, 01.07.2010, p. 689-695.

Research output: Contribution to journalArticle

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AU - Sarpatwari, K.

AU - Dellas, N. S.

AU - Awadelkarim, Osama O.

AU - Mohney, Suzanne E.

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AB - Geometrical and surface effects can significantly alter conduction through metal/semiconductor nanowire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current-voltage (I-V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metal/nanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I-V characteristics of a surround-gate axially-aligned θ-Ni2Si/n-Si nanowire Schottky barrier contact.

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