We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance (NZFMR) spectra. The method utilizes a least squares fitting of models developed from the stochastic quantum Liouville equation. We applied our fitting algorithm to two distinct material systems: Si/SiO2 metal oxide semiconductor field effect transistors and a-Si:H metal insulator semiconductor capacitors. Our fitted results and hyperfine parameters are in reasonable agreement with existing knowledge of the defects present in the systems. Our work indicates that the NZFMR response and fitting of the NZFMR spectrum via models developed from the stochastic quantum Liouville equation could be a relatively simple yet powerful addition to the family of spin-based techniques used to explore the chemical and structural nature of point defects in semiconductor devices and insulators.
|Original language||English (US)|
|Journal||Journal of Applied Physics|
|State||Published - Sep 28 2020|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)