Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics

Himanshu Madan, Matthew J. Hollander, Joshua Alexander Robinson, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Graphene as a material has created a lot of interest due to properties like high saturation velocity [1], high current carrying capacity, ambipolar characteristics [2] and high transconductance. These properties make graphene based transistors a promising candidate for high frequency applications. Recently, there have been [2-3] demonstration of RF mixers with graphene transistors. Traditional DC measurements are not sufficient when considering graphene transistors for high frequency circuit design, making it essential to study the transistor IV performance at operating frequencies >GHz. In this work we outline an RF IV extraction technique and use physics based analytical model to evaluate the performance of graphene transistors with HfO 2 high-κ dielectric.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages181-182
Number of pages2
DOIs
StatePublished - Oct 5 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

Fingerprint

Current voltage characteristics
Graphene
Transistors
Transconductance
Analytical models
Demonstrations
Physics
Networks (circuits)
Graphene transistors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Madan, H., Hollander, M. J., Robinson, J. A., & Datta, S. (2012). Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 181-182). [6257022] https://doi.org/10.1109/DRC.2012.6257022
Madan, Himanshu ; Hollander, Matthew J. ; Robinson, Joshua Alexander ; Datta, Suman. / Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics. 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. pp. 181-182
@inproceedings{08b566e8c04f4bf2abbfa980643e0051,
title = "Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics",
abstract = "Graphene as a material has created a lot of interest due to properties like high saturation velocity [1], high current carrying capacity, ambipolar characteristics [2] and high transconductance. These properties make graphene based transistors a promising candidate for high frequency applications. Recently, there have been [2-3] demonstration of RF mixers with graphene transistors. Traditional DC measurements are not sufficient when considering graphene transistors for high frequency circuit design, making it essential to study the transistor IV performance at operating frequencies >GHz. In this work we outline an RF IV extraction technique and use physics based analytical model to evaluate the performance of graphene transistors with HfO 2 high-κ dielectric.",
author = "Himanshu Madan and Hollander, {Matthew J.} and Robinson, {Joshua Alexander} and Suman Datta",
year = "2012",
month = "10",
day = "5",
doi = "10.1109/DRC.2012.6257022",
language = "English (US)",
isbn = "9781467311618",
pages = "181--182",
booktitle = "70th Device Research Conference, DRC 2012 - Conference Digest",

}

Madan, H, Hollander, MJ, Robinson, JA & Datta, S 2012, Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6257022, pp. 181-182, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6257022

Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics. / Madan, Himanshu; Hollander, Matthew J.; Robinson, Joshua Alexander; Datta, Suman.

70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 181-182 6257022.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics

AU - Madan, Himanshu

AU - Hollander, Matthew J.

AU - Robinson, Joshua Alexander

AU - Datta, Suman

PY - 2012/10/5

Y1 - 2012/10/5

N2 - Graphene as a material has created a lot of interest due to properties like high saturation velocity [1], high current carrying capacity, ambipolar characteristics [2] and high transconductance. These properties make graphene based transistors a promising candidate for high frequency applications. Recently, there have been [2-3] demonstration of RF mixers with graphene transistors. Traditional DC measurements are not sufficient when considering graphene transistors for high frequency circuit design, making it essential to study the transistor IV performance at operating frequencies >GHz. In this work we outline an RF IV extraction technique and use physics based analytical model to evaluate the performance of graphene transistors with HfO 2 high-κ dielectric.

AB - Graphene as a material has created a lot of interest due to properties like high saturation velocity [1], high current carrying capacity, ambipolar characteristics [2] and high transconductance. These properties make graphene based transistors a promising candidate for high frequency applications. Recently, there have been [2-3] demonstration of RF mixers with graphene transistors. Traditional DC measurements are not sufficient when considering graphene transistors for high frequency circuit design, making it essential to study the transistor IV performance at operating frequencies >GHz. In this work we outline an RF IV extraction technique and use physics based analytical model to evaluate the performance of graphene transistors with HfO 2 high-κ dielectric.

UR - http://www.scopus.com/inward/record.url?scp=84866942000&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866942000&partnerID=8YFLogxK

U2 - 10.1109/DRC.2012.6257022

DO - 10.1109/DRC.2012.6257022

M3 - Conference contribution

SN - 9781467311618

SP - 181

EP - 182

BT - 70th Device Research Conference, DRC 2012 - Conference Digest

ER -

Madan H, Hollander MJ, Robinson JA, Datta S. Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics. In 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 181-182. 6257022 https://doi.org/10.1109/DRC.2012.6257022