Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics

Himanshu Madan, Matthew J. Hollander, Joshua A. Robinson, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Graphene as a material has created a lot of interest due to properties like high saturation velocity [1], high current carrying capacity, ambipolar characteristics [2] and high transconductance. These properties make graphene based transistors a promising candidate for high frequency applications. Recently, there have been [2-3] demonstration of RF mixers with graphene transistors. Traditional DC measurements are not sufficient when considering graphene transistors for high frequency circuit design, making it essential to study the transistor IV performance at operating frequencies >GHz. In this work we outline an RF IV extraction technique and use physics based analytical model to evaluate the performance of graphene transistors with HfO 2 high-κ dielectric.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages181-182
Number of pages2
DOIs
StatePublished - Oct 5 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Madan, H., Hollander, M. J., Robinson, J. A., & Datta, S. (2012). Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 181-182). [6257022] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6257022