Extreme electronic bandgap modification in laser-crystallized silicon optical fibres

Noel Healy, Sakellaris Mailis, Nadezhda M. Bulgakova, Pier J.A. Sazio, Todd D. Day, Justin R. Sparks, Hiu Y. Cheng, John V. Badding, Anna C. Peacock

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical properties in the near-and mid-infrared, silicon is now promising to have a similar impact on photonics. The ability to incorporate both optical and electronic functionality in a single material offers the tantalizing prospect of amplifying, modulating and detecting light within a monolithic platform. However, a direct consequence of silicon's transparency is that it cannot be used to detect light at telecommunications wavelengths. Here, we report on a laser processing technique developed for our silicon fibre technology through which we can modify the electronic band structure of the semiconductor material as it is crystallized. The unique fibre geometry in which the silicon core is confined within a silica cladding allows large anisotropic stresses to be set into the crystalline material so that the size of the bandgap can be engineered. We demonstrate extreme bandgap reductions from 1.11 eV down to 0.59 eV, enabling optical detection out to 2,100 nm.

Original languageEnglish (US)
Pages (from-to)1122-1127
Number of pages6
JournalNature Materials
Volume13
Issue number12
DOIs
StatePublished - Dec 1 2014

Fingerprint

Silicon
Optical fibers
Energy gap
optical fibers
Lasers
silicon
electronics
lasers
fibers
Fibers
microelectronics
Microelectronics
Silicon Dioxide
Band structure
Transparency
Photonics
Telecommunication
telecommunication
platforms
Optical properties

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Healy, N., Mailis, S., Bulgakova, N. M., Sazio, P. J. A., Day, T. D., Sparks, J. R., ... Peacock, A. C. (2014). Extreme electronic bandgap modification in laser-crystallized silicon optical fibres. Nature Materials, 13(12), 1122-1127. https://doi.org/10.1038/nmat4098
Healy, Noel ; Mailis, Sakellaris ; Bulgakova, Nadezhda M. ; Sazio, Pier J.A. ; Day, Todd D. ; Sparks, Justin R. ; Cheng, Hiu Y. ; Badding, John V. ; Peacock, Anna C. / Extreme electronic bandgap modification in laser-crystallized silicon optical fibres. In: Nature Materials. 2014 ; Vol. 13, No. 12. pp. 1122-1127.
@article{85005f1955af45b3a371aab7a1ebc19f,
title = "Extreme electronic bandgap modification in laser-crystallized silicon optical fibres",
abstract = "For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical properties in the near-and mid-infrared, silicon is now promising to have a similar impact on photonics. The ability to incorporate both optical and electronic functionality in a single material offers the tantalizing prospect of amplifying, modulating and detecting light within a monolithic platform. However, a direct consequence of silicon's transparency is that it cannot be used to detect light at telecommunications wavelengths. Here, we report on a laser processing technique developed for our silicon fibre technology through which we can modify the electronic band structure of the semiconductor material as it is crystallized. The unique fibre geometry in which the silicon core is confined within a silica cladding allows large anisotropic stresses to be set into the crystalline material so that the size of the bandgap can be engineered. We demonstrate extreme bandgap reductions from 1.11 eV down to 0.59 eV, enabling optical detection out to 2,100 nm.",
author = "Noel Healy and Sakellaris Mailis and Bulgakova, {Nadezhda M.} and Sazio, {Pier J.A.} and Day, {Todd D.} and Sparks, {Justin R.} and Cheng, {Hiu Y.} and Badding, {John V.} and Peacock, {Anna C.}",
year = "2014",
month = "12",
day = "1",
doi = "10.1038/nmat4098",
language = "English (US)",
volume = "13",
pages = "1122--1127",
journal = "Nature Materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",
number = "12",

}

Healy, N, Mailis, S, Bulgakova, NM, Sazio, PJA, Day, TD, Sparks, JR, Cheng, HY, Badding, JV & Peacock, AC 2014, 'Extreme electronic bandgap modification in laser-crystallized silicon optical fibres', Nature Materials, vol. 13, no. 12, pp. 1122-1127. https://doi.org/10.1038/nmat4098

Extreme electronic bandgap modification in laser-crystallized silicon optical fibres. / Healy, Noel; Mailis, Sakellaris; Bulgakova, Nadezhda M.; Sazio, Pier J.A.; Day, Todd D.; Sparks, Justin R.; Cheng, Hiu Y.; Badding, John V.; Peacock, Anna C.

In: Nature Materials, Vol. 13, No. 12, 01.12.2014, p. 1122-1127.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Extreme electronic bandgap modification in laser-crystallized silicon optical fibres

AU - Healy, Noel

AU - Mailis, Sakellaris

AU - Bulgakova, Nadezhda M.

AU - Sazio, Pier J.A.

AU - Day, Todd D.

AU - Sparks, Justin R.

AU - Cheng, Hiu Y.

AU - Badding, John V.

AU - Peacock, Anna C.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical properties in the near-and mid-infrared, silicon is now promising to have a similar impact on photonics. The ability to incorporate both optical and electronic functionality in a single material offers the tantalizing prospect of amplifying, modulating and detecting light within a monolithic platform. However, a direct consequence of silicon's transparency is that it cannot be used to detect light at telecommunications wavelengths. Here, we report on a laser processing technique developed for our silicon fibre technology through which we can modify the electronic band structure of the semiconductor material as it is crystallized. The unique fibre geometry in which the silicon core is confined within a silica cladding allows large anisotropic stresses to be set into the crystalline material so that the size of the bandgap can be engineered. We demonstrate extreme bandgap reductions from 1.11 eV down to 0.59 eV, enabling optical detection out to 2,100 nm.

AB - For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical properties in the near-and mid-infrared, silicon is now promising to have a similar impact on photonics. The ability to incorporate both optical and electronic functionality in a single material offers the tantalizing prospect of amplifying, modulating and detecting light within a monolithic platform. However, a direct consequence of silicon's transparency is that it cannot be used to detect light at telecommunications wavelengths. Here, we report on a laser processing technique developed for our silicon fibre technology through which we can modify the electronic band structure of the semiconductor material as it is crystallized. The unique fibre geometry in which the silicon core is confined within a silica cladding allows large anisotropic stresses to be set into the crystalline material so that the size of the bandgap can be engineered. We demonstrate extreme bandgap reductions from 1.11 eV down to 0.59 eV, enabling optical detection out to 2,100 nm.

UR - http://www.scopus.com/inward/record.url?scp=84934877132&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84934877132&partnerID=8YFLogxK

U2 - 10.1038/nmat4098

DO - 10.1038/nmat4098

M3 - Article

C2 - 25262096

AN - SCOPUS:84934877132

VL - 13

SP - 1122

EP - 1127

JO - Nature Materials

JF - Nature Materials

SN - 1476-1122

IS - 12

ER -

Healy N, Mailis S, Bulgakova NM, Sazio PJA, Day TD, Sparks JR et al. Extreme electronic bandgap modification in laser-crystallized silicon optical fibres. Nature Materials. 2014 Dec 1;13(12):1122-1127. https://doi.org/10.1038/nmat4098