F-TES ADT organic integrated circuits on glass and plastic substrates

Kyu Park Sung, Devin A. Mourey, Insoo Kim, Dalong Zhao, Sankar Subramanian, John E. Anthony, Thomas N. Jackson

Research output: Contribution to journalConference articlepeer-review

Abstract

Using the small-molecule organic semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (F-TES ADT), we have fabricated spin cast organic thin film transistors (OTFTs) and integrated circuits on glass and plastic substrates. Our F-TES ADT spin cast films are deposited at room temperature from toluene or chlorobenzene solutions with no annealing steps. Film growth is considerably more ordered on pentafluorobenzenethiol (PFBT) treated Au electrodes surfaces than on oxide and on samples with patterned PFBT-Au structures grains appear to grow out from the PFBT-Au areas into the oxide areas. OTFTs fabricated on silicon wafers have mobility of 0.1 - 0.4 cm2/V·s and 0.2 - 1.0 cm2 / V·s spin cast from toluene and cholobenzene solutions respectively. Results for operational and environmental stability of spin cast F-TES ADT OTFTs and circuits on both glass and plastic substrates are also presented.

Original languageEnglish (US)
Article number4418908
Pages (from-to)225-228
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - Dec 1 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: Dec 10 2007Dec 12 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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